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APTC90DAM60T1G
Boost chopper Super Junction MOSFET
VDSS = 900V RDSon = 60m max @ Tj = 25C ID = 59A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Power Module
5 6 11
CR1 3 4
NTC
Q2 9 10 1 2
12
* * * *
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 900 59 44 150 20 60 462 8.8 2.9 1940 Unit V A V m W A mJ
August, 2009 1-5 APTC90DAM60T1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC90DAM60T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V
Min Tj = 25C Tj = 125C 2.5
Typ 1000 50 3
Max 200 60 3.5 200
Unit A m V nA
VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = 20 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125C) VGS = 10V VBus = 600V ID = 52A RG = 3.8 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Inductive switching @ 125C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Min Typ 13.6 0.66 540 64 230 70 20 400 25 3 1.5 4.2 1.7 mJ ns nC Max Unit nF
mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V Test Conditions VR=1000V Tj = 25C Tj = 125C Tc = 80C Min 1000 Typ Max 100 500 60 2.2 2.8 1.8 235 305 460 2600 2.8 V ns nC
August, 2009 2-5 APTC90DAM60T1G - Rev 0
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
di/dt =200A/s
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APTC90DAM60T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.9 150 125 100 4.7 80 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTC90DAM60T1G - Rev 0
August, 2009
APTC90DAM60T1G
Typical CoolMOS Performance Curve
0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=20, 8V
160
6V
BVDSS, Drain to Source Breakdown Voltage
240 ID, Drain Current (A)
Breakdown Voltage vs Temperature 1000 975 950 925 900 25 50 75 100 125 TJ, Junction Temperature (C) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A) 50 40 30 20 10 0
5V
80
0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 1000 ID, Drain Current (A) 20
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
10 ms
1 1000 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss C, Capacitance (pF) 10000 1000 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Coss VGS, Gate to Source Voltage (V) 100000 10
25
50 75 100 125 TC, Case Temperature (C)
150
Gate Charge vs Gate to Source Voltage VDS=400V ID=52A TJ=25C
6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600
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4-5
APTC90DAM60T1G - Rev 0
August, 2009
8
APTC90DAM60T1G
400
ZVS
RDS(on), Drain to Source ON resistance (Normalized)
Operating Frequency vs Drain Current
VDS=600V D=50% RG=3.8 TJ=125C TC=75C
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 TJ, Junction Temperature (C) Switching Energy vs Gate Resistance
Frequency (kHz)
300 200
Hard switching
100 0 20 25
ZCS
30
35
40
45
50
ID, Drain Current (A)
Switching Energy vs Current 8 Eon and Eoff (mJ) 6 4
Eoff VDS=600V RG=3.8 TJ=125C L=100H
7 Switching Energy (mJ) 6 5 4 3 2 1 0 0 5 10
VDS=600V ID=52A TJ=125C L=100H Eon Eoff
Eon
2 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
15
20
Gate Resistance (Ohms)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTC90DAM60T1G - Rev 0
August, 2009

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